FDMC15N06

FDMC15N06 onsemi / Fairchild


FDMC15N06_D-1807700.pdf Hersteller: onsemi / Fairchild
MOSFET UltraFET 55V, 15A
auf Bestellung 46 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.10 EUR
10+2.80 EUR
25+2.64 EUR
100+2.25 EUR
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Technische Details FDMC15N06 onsemi / Fairchild

Description: MOSFET N-CH 55V 2.4A/15A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 15A, 10V, Power Dissipation (Max): 2.3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.

Weitere Produktangebote FDMC15N06

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FDMC15N06 FDMC15N06 Hersteller : ONSEMI FAIRS47607-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FDMC15N06 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1217 Stücke:
Lieferzeit 14-21 Tag (e)
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FDMC15N06 Hersteller : ONSEMI fdmc15n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Mounting: SMD
Case: Power33
Drain-source voltage: 55V
Drain current: 9A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FDMC15N06 FDMC15N06 Hersteller : onsemi fdmc15n06-d.pdf Description: MOSFET N-CH 55V 2.4A/15A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
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FDMC15N06 FDMC15N06 Hersteller : onsemi fdmc15n06-d.pdf Description: MOSFET N-CH 55V 2.4A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMC15N06 Hersteller : ONSEMI fdmc15n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Mounting: SMD
Case: Power33
Drain-source voltage: 55V
Drain current: 9A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH