auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.10 EUR |
| 10+ | 2.80 EUR |
| 25+ | 2.64 EUR |
| 100+ | 2.25 EUR |
Produktrezensionen
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Technische Details FDMC15N06 onsemi / Fairchild
Description: MOSFET N-CH 55V 2.4A/15A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 15A, 10V, Power Dissipation (Max): 2.3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote FDMC15N06
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDMC15N06 | Hersteller : ONSEMI |
 Description: ONSEMI - FDMC15N06 - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1217 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC15N06 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33 Mounting: SMD Case: Power33 Drain-source voltage: 55V Drain current: 9A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMC15N06 | Hersteller : onsemi |
Description: MOSFET N-CH 55V 2.4A/15A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 15A, 10V Power Dissipation (Max): 2.3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDMC15N06 | Hersteller : onsemi |
Description: MOSFET N-CH 55V 2.4A/15A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 15A, 10V Power Dissipation (Max): 2.3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FDMC15N06 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33 Mounting: SMD Case: Power33 Drain-source voltage: 55V Drain current: 9A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |