FDMC2610 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
FET Type: N-Channel
| Anzahl | Preis |
|---|---|
| 3000+ | 1.67 EUR |
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Technische Details FDMC2610 onsemi
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-MLP (3.3x3.3), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc), FET Type: N-Channel.
Weitere Produktangebote FDMC2610 nach Preis ab 1.56 EUR bis 5.33 EUR
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FDMC2610 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V |
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