FDMC2610 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.99 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC2610 onsemi
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V, Power Dissipation (Max): 2.1W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V.
Weitere Produktangebote FDMC2610 nach Preis ab 2.08 EUR bis 6.5 EUR
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FDMC2610 | onsemi |
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V |
auf Bestellung 42540 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC2610 | onsemi |
MOSFETs 200V N-Ch UltraFET PowerTrench MOSFET |
auf Bestellung 1913 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMC2610 |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
auf Bestellung 42540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.19 EUR |
| 10+ | 3.57 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.21 EUR |
| 1000+ | 2.08 EUR |
| FDMC2610 |
|
Hersteller: onsemi
MOSFETs 200V N-Ch UltraFET PowerTrench MOSFET
MOSFETs 200V N-Ch UltraFET PowerTrench MOSFET
auf Bestellung 1913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.5 EUR |
| 10+ | 4.24 EUR |
| 100+ | 2.98 EUR |
| 500+ | 2.49 EUR |
| 1000+ | 2.39 EUR |
| 3000+ | 2.15 EUR |