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FDMC5614P

FDMC5614P onsemi

fdmc5614p-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 60V 5.7A/13.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 13.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.68 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDMC5614P onsemi

Description: MOSFET P-CH 60V 5.7A/13.5A 8MLP, Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-MLP (3.3x3.3), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 13.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote FDMC5614P nach Preis ab 0.73 EUR bis 1.6 EUR

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FDMC5614P FDMC5614P onsemi fdmc5614p-d.pdf Description: MOSFET P-CH 60V 5.7A/13.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 13.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5490 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.6 EUR
13+1.43 EUR
100+1.12 EUR
500+0.92 EUR
1000+0.73 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
FDMC5614P FDMC5614P onsemi / Fairchild FDMC5614P_D-2255855.pdf MOSFET LOW VOLTAGE
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDMC5614P fdmc5614p-d.pdf
FDMC5614P
Hersteller: onsemi
Description: MOSFET P-CH 60V 5.7A/13.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 13.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
13+1.43 EUR
100+1.12 EUR
500+0.92 EUR
1000+0.73 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
FDMC5614P FDMC5614P_D-2255855.pdf
FDMC5614P
Hersteller: onsemi / Fairchild
MOSFET LOW VOLTAGE
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH