.JPG "FDMC5614P")
FDMC5614P onsemi
Hersteller: onsemiDescription: MOSFET P-CH 60V 5.7A/13.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.68 EUR |
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Technische Details FDMC5614P onsemi
Description: MOSFET P-CH 60V 5.7A/13.5A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 13.5A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V, Power Dissipation (Max): 2.1W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 30 V.
Weitere Produktangebote FDMC5614P nach Preis ab 0.91 EUR bis 1.6 EUR
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FDMC5614P | Hersteller : onsemi |
Description: MOSFET P-CH 60V 5.7A/13.5A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 13.5A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 30 V |
auf Bestellung 5490 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC5614P | Hersteller : onsemi / Fairchild |
MOSFET LOW VOLTAGE |
auf Bestellung 5 Stücke: Lieferzeit 14-28 Tag (e) |
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| FDMC5614P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8 Case: WDFN8 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Drain-source voltage: -60V Drain current: -13.5A On-state resistance: 168mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC5614P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8 Case: WDFN8 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Drain-source voltage: -60V Drain current: -13.5A On-state resistance: 168mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |