FDMC6675BZ ON Semiconductor
auf Bestellung 2661 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 1.13 EUR |
| 140+ | 1.08 EUR |
| 164+ | 0.89 EUR |
| 250+ | 0.85 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.57 EUR |
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Produktbewertung abgeben
Technische Details FDMC6675BZ ON Semiconductor
Description: MOSFET P-CH 30V 9.5A/20A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V, Power Dissipation (Max): 2.3W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V.
Weitere Produktangebote FDMC6675BZ nach Preis ab 0.55 EUR bis 2.78 EUR
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FDMC6675BZ | Hersteller : onsemi |
 Description: MOSFET P-CH 30V 9.5A/20A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC6675BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 9.5A 8-Pin WDFN EP T/R |
auf Bestellung 2661 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC6675BZ | Hersteller : onsemi / Fairchild |
MOSFET -30V 20A P-Channel PowerTrench |
auf Bestellung 8819 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMC6675BZ | Hersteller : onsemi |
Description: MOSFET P-CH 30V 9.5A/20A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V |
auf Bestellung 8850 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC6675BZ Produktcode: 130485 |
Verschiedene Bauteile > Other components 3 |
Produkt ist nicht verfügbar
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FDMC6675BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 9.5A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC6675BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 9.5A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC6675BZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -20A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 65nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -32A Mounting: SMD Case: WDFN8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC6675BZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -20A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 65nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -32A Mounting: SMD Case: WDFN8 |
Produkt ist nicht verfügbar |