FDMC6675BZ onsemi
Hersteller: onsemiDescription: MOSFET P-CH 30V 9.5A/20A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.80 EUR |
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Technische Details FDMC6675BZ onsemi
Description: MOSFET P-CH 30V 9.5A/20A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V, Power Dissipation (Max): 2.3W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V.
Weitere Produktangebote FDMC6675BZ nach Preis ab 0.51 EUR bis 2.48 EUR
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FDMC6675BZ | Hersteller : ON Semiconductor |
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FDMC6675BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 9.5A 8-Pin WDFN EP T/R |
auf Bestellung 2661 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC6675BZ | Hersteller : onsemi / Fairchild |
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auf Bestellung 4909 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC6675BZ | Hersteller : onsemi |
Description: MOSFET P-CH 30V 9.5A/20A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V |
auf Bestellung 4933 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC6675BZ Produktcode: 130485
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FDMC6675BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 9.5A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC6675BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 9.5A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC6675BZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Mounting: SMD Case: WDFN8 Drain-source voltage: -30V Drain current: -20A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 65nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -32A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC6675BZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Mounting: SMD Case: WDFN8 Drain-source voltage: -30V Drain current: -20A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 65nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -32A |
Produkt ist nicht verfügbar |