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FDMC7200S onsemi


fdmc7200s-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7A/13A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.68 EUR
6000+0.63 EUR
9000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDMC7200S onsemi

Description: MOSFET 2N-CH 30V 7A/13A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A, 13A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power33 (3x3).

Weitere Produktangebote FDMC7200S nach Preis ab 0.62 EUR bis 2.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FDMC7200S FDMC7200S onsemi / Fairchild FDMC7200S_D-2312360.pdf MOSFETs 30V Dual N-Channel PowerTrench MOSFET
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.99 EUR
10+1.34 EUR
100+0.93 EUR
500+0.75 EUR
1000+0.69 EUR
3000+0.62 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDMC7200S FDMC7200S onsemi fdmc7200s-d.pdf Description: MOSFET 2N-CH 30V 7A/13A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 12817 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.59 EUR
13+1.64 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDMC7200S FDMC7200S_D-2312360.pdf
Hersteller: onsemi / Fairchild
MOSFETs 30V Dual N-Channel PowerTrench MOSFET
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.99 EUR
10+1.34 EUR
100+0.93 EUR
500+0.75 EUR
1000+0.69 EUR
3000+0.62 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDMC7200S fdmc7200s-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7A/13A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 12817 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.64 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH