FDMC8010ET30 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
auf Bestellung 43049 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
249+ | 1.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC8010ET30 onsemi
Description: MOSFET N-CH 30V 30A/174A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: Power33, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V.
Weitere Produktangebote FDMC8010ET30
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FDMC8010ET30 | Hersteller : ONSEMI |
Description: ONSEMI - FDMC8010ET30 - MOSFET, N-CH, 30V, 174A, 65W, POWER 33 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 43049 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8010ET30 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 30A 8-Pin Power 33 EP T/R |
Produkt ist nicht verfügbar |
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FDMC8010ET30 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 30A/174A POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDMC8010ET30 | Hersteller : onsemi / Fairchild | MOSFET FET 30V 1.3 MOHM PQFN33 |
Produkt ist nicht verfügbar |