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FDMC8010ET30

FDMC8010ET30 onsemi

fdmc8010et30-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
249+2.04 EUR
Mindestbestellmenge: 249
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Technische Details FDMC8010ET30 onsemi

Description: MOSFET N-CH 30V 30A/174A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: Power33, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V.

Weitere Produktangebote FDMC8010ET30

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FDMC8010ET30 Hersteller : ONSEMI ONSM-S-A0008938566-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - FDMC8010ET30 - MOSFET, N-CH, 30V, 174A, 65W, POWER 33
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 43049 Stücke:
Lieferzeit 14-21 Tag (e)
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FDMC8010ET30 FDMC8010ET30 Hersteller : ON Semiconductor fdmc8010et30-d.pdf Trans MOSFET N-CH 30V 30A 8-Pin Power 33 EP T/R
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FDMC8010ET30 FDMC8010ET30 Hersteller : onsemi fdmc8010et30-d.pdf Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
Produkt ist nicht verfügbar
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FDMC8010ET30 FDMC8010ET30 Hersteller : onsemi / Fairchild FDMC8010ET30_D-1807712.pdf MOSFET FET 30V 1.3 MOHM PQFN33
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