FDMC8360LET40 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 27A/141A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 141A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 20 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.39 EUR |
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Technische Details FDMC8360LET40 onsemi
Description: MOSFET N-CH 40V 27A/141A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 141A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V, Power Dissipation (Max): 2.8W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 20 V.
Weitere Produktangebote FDMC8360LET40 nach Preis ab 1.03 EUR bis 4.22 EUR
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FDMC8360LET40 | Hersteller : onsemi / Fairchild |
MOSFETs PT8 Nch 40/20V Power Trench MOSFET |
auf Bestellung 2165 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8360LET40 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 27A/141A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 141A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V Power Dissipation (Max): 2.8W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 20 V |
auf Bestellung 35184 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8360LET40 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 27A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC8360LET40 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 75W Case: Power33 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 658A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC8360LET40 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 75W Case: Power33 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 658A |
Produkt ist nicht verfügbar |