| Anzahl | Preis |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 2.73 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.63 EUR |
| 3000+ | 1.5 EUR |
| 6000+ | 1.49 EUR |
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Technische Details FDMC86102 onsemi / Fairchild
Description: MOSFET N-CH 100V 7A/20A POWER33, Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: Power33, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMC86102 nach Preis ab 2.03 EUR bis 5 EUR
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FDMC86102 | onsemi |
 Description: MOSFET N-CH 100V 7A/20A POWER33Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V |
auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86102 | onsemi |
MOSFETs 100/20V N-Chan PowerTrench |
auf Bestellung 1962 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86102 | ON Semiconductor / Fairchild |
MOSFET 100/20V N-Chan Power Trench |
auf Bestellung 166 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMC86102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
Description: MOSFET N-CH 100V 7A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.52 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.03 EUR |
| FDMC86102 |
|
Hersteller: onsemi
MOSFETs 100/20V N-Chan PowerTrench
MOSFETs 100/20V N-Chan PowerTrench
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5 EUR |
| 10+ | 3.26 EUR |
| 100+ | 2.25 EUR |
| FDMC86102 |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET 100/20V N-Chan Power Trench
MOSFET 100/20V N-Chan Power Trench
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH