FDMC86260ET150 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.59 EUR |
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Technische Details FDMC86260ET150 onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V.
Weitere Produktangebote FDMC86260ET150 nach Preis ab 1.1 EUR bis 5.02 EUR
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FDMC86260ET150 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
auf Bestellung 2580 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86260ET150 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
auf Bestellung 2580 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86260ET150 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
auf Bestellung 661 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86260ET150 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
auf Bestellung 2792 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86260ET150 | Hersteller : onsemi / Fairchild |
MOSFETs 150V N-Channel Power Trench MOSFET |
auf Bestellung 8326 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86260ET150 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 5.4A/25A PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
auf Bestellung 6265 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86260ET150 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86260ET150 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC86260ET150 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33 Gate charge: 21nC On-state resistance: 69mΩ Power dissipation: 65W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Case: Power33 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 150V Pulsed drain current: 116A Drain current: 18A |
Produkt ist nicht verfügbar |