FDMC86260ET150 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
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Technische Details FDMC86260ET150 onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: Power33, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc).
Weitere Produktangebote FDMC86260ET150 nach Preis ab 1.49 EUR bis 5.14 EUR
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FDMC86260ET150 | onsemi / Fairchild |
MOSFETs 150V N-Channel Power Trench MOSFET |
auf Bestellung 8326 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86260ET150 | ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin WDFN EP T/R |
auf Bestellung 661 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86260ET150 | ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin WDFN EP T/R |
auf Bestellung 2665 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86260ET150 | onsemi |
Description: MOSFET N-CH 150V 5.4A/25A PWR33 Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 6265 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86260ET150 | onsemi |
MOSFETs 150V N-Channel Power Trench MOSFET |
auf Bestellung 6979 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMC86260ET150 |
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Hersteller: onsemi / Fairchild
MOSFETs 150V N-Channel Power Trench MOSFET
MOSFETs 150V N-Channel Power Trench MOSFET
auf Bestellung 8326 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.16 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.76 EUR |
| 1000+ | 1.68 EUR |
| 3000+ | 1.49 EUR |
| FDMC86260ET150 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 150V 5.4A 8-Pin WDFN EP T/R
Trans MOSFET N-CH 150V 5.4A 8-Pin WDFN EP T/R
auf Bestellung 661 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 223+ | 2.44 EUR |
| 500+ | 2.17 EUR |
| FDMC86260ET150 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 150V 5.4A 8-Pin WDFN EP T/R
Trans MOSFET N-CH 150V 5.4A 8-Pin WDFN EP T/R
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 223+ | 2.44 EUR |
| 500+ | 2.17 EUR |
| 1000+ | 1.95 EUR |
| FDMC86260ET150 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 6265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.02 EUR |
| 10+ | 3.25 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.82 EUR |
| 1000+ | 1.69 EUR |
| FDMC86260ET150 |
|
Hersteller: onsemi
MOSFETs 150V N-Channel Power Trench MOSFET
MOSFETs 150V N-Channel Power Trench MOSFET
auf Bestellung 6979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.14 EUR |
| 10+ | 3.36 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.85 EUR |
| 3000+ | 1.71 EUR |