FDMC86261P onsemi
Hersteller: onsemi
Description: MOSFET P-CH 150V 2.7A/9A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 75 V
Description: MOSFET P-CH 150V 2.7A/9A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 75 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.28 EUR |
6000+ | 1.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC86261P onsemi
Description: MOSFET P-CH 150V 2.7A/9A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 9A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 2.4A, 10V, Power Dissipation (Max): 2.3W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 75 V.
Weitere Produktangebote FDMC86261P nach Preis ab 1.35 EUR bis 4.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDMC86261P | Hersteller : onsemi |
Description: MOSFET P-CH 150V 2.7A/9A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 9A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.4A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 75 V |
auf Bestellung 6761 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86261P | Hersteller : onsemi / Fairchild | MOSFET P-Channel PowerTrench MOSFET -150V, -9A, 160mohm |
auf Bestellung 25874 Stücke: Lieferzeit 265-279 Tag (e) |
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FDMC86261P | Hersteller : ONSEMI |
Description: ONSEMI - FDMC86261P - Leistungs-MOSFET, p-Kanal, 150 V, 9 A, 0.13 ohm, WDFN, Oberflächenmontage tariffCode: 85413000 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 40W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm |
auf Bestellung 2210 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86261P | Hersteller : ONSEMI |
Description: ONSEMI - FDMC86261P - Leistungs-MOSFET, p-Kanal, 150 V, 9 A, 0.13 ohm, WDFN, Oberflächenmontage tariffCode: 85413000 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 40W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm |
auf Bestellung 2210 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86261P | Hersteller : ON Semiconductor | Trans MOSFET P-CH 150V 2.7A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86261P | Hersteller : ON Semiconductor | Trans MOSFET P-CH 150V 2.7A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86261P | Hersteller : ON Semiconductor | Trans MOSFET P-CH 150V 2.7A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86261P | Hersteller : ONSEMI | FDMC86261P SMD P channel transistors |
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