FDMC86320 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.33 EUR |
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Technische Details FDMC86320 onsemi
Description: MOSFET N-CH 80V 10.7A/22A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V, Power Dissipation (Max): 2.3W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V.
Weitere Produktangebote FDMC86320 nach Preis ab 1.30 EUR bis 2.96 EUR
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FDMC86320 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 10.7A/22A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
auf Bestellung 5388 Stücke: Lieferzeit 10-14 Tag (e) |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33 Case: Power33 Drain-source voltage: 80V Drain current: 22A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
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| FDMC86320 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33 Case: Power33 Drain-source voltage: 80V Drain current: 22A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD |
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