FDMC86320 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.31 EUR |
6000+ | 1.26 EUR |
9000+ | 1.22 EUR |
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Technische Details FDMC86320 onsemi
Description: MOSFET N-CH 80V 10.7A/22A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V, Power Dissipation (Max): 2.3W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V.
Weitere Produktangebote FDMC86320 nach Preis ab 1.38 EUR bis 4.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDMC86320 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 10.7A/22A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
auf Bestellung 47388 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86320 | Hersteller : onsemi / Fairchild | MOSFET 80V N-Channel PowerTrench MOSFET |
auf Bestellung 5377 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMC86320 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 80V 10.7A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86320 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 80V 10.7A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86320 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33 Pulsed drain current: 50A Power dissipation: 40W Gate charge: 41nC Polarisation: unipolar Drain current: 22A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: Power33 On-state resistance: 18mΩ Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMC86320 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33 Pulsed drain current: 50A Power dissipation: 40W Gate charge: 41nC Polarisation: unipolar Drain current: 22A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: Power33 On-state resistance: 18mΩ Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |