FDMC86324 ON Semiconductor
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.95 EUR |
| 6000+ | 0.87 EUR |
| 9000+ | 0.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC86324 ON Semiconductor
Description: MOSFET N-CH 80V 7A/20A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power33, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V.
Weitere Produktangebote FDMC86324 nach Preis ab 0.79 EUR bis 3.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDMC86324 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 80V 7A 8-Pin Power 33 T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
FDMC86324 | Hersteller : onsemi / Fairchild |
MOSFETs 80V N-Channel PowerTrench MOSFET |
auf Bestellung 7229 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
FDMC86324 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 7A/20A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V |
auf Bestellung 3543 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
FDMC86324 | Hersteller : ON Semiconductor / Fairchild |
MOSFET 80V N-Channel PowerTrench MOSFET |
auf Bestellung 232 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||
 |
FDMC86324 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 7A 8-Pin Power 33 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
FDMC86324 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 7A 8-Pin Power 33 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
FDMC86324 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Case: PQFN8 Drain-source voltage: 80V Drain current: 20A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
FDMC86324 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 7A/20A POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
FDMC86324 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Case: PQFN8 Drain-source voltage: 80V Drain current: 20A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |