FDMC86340ET80 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 14A/68A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.69 EUR |
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Technische Details FDMC86340ET80 onsemi
Description: MOSFET N-CH 80V 14A/68A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V.
Weitere Produktangebote FDMC86340ET80 nach Preis ab 2.8 EUR bis 5.53 EUR
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FDMC86340ET80 | Hersteller : onsemi / Fairchild |
MOSFET FET 80V 6.5 MOHM PQFN33 |
auf Bestellung 5026 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86340ET80 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 14A/68A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V |
auf Bestellung 3160 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86340ET80 | Hersteller : ONSEMI |
Description: ONSEMI - FDMC86340ET80 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 4780 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC86340ET80 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 316A; 65W; PowerQFN8 Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 49nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 316A Mounting: SMD Case: PowerQFN8 Drain-source voltage: 80V Drain current: 48A On-state resistance: 11mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC86340ET80 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 316A; 65W; PowerQFN8 Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 49nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 316A Mounting: SMD Case: PowerQFN8 Drain-source voltage: 80V Drain current: 48A On-state resistance: 11mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |