FDMC86570LET60 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.99 EUR |
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Technische Details FDMC86570LET60 onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V.
Weitere Produktangebote FDMC86570LET60 nach Preis ab 1.99 EUR bis 5.30 EUR
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FDMC86570LET60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R |
auf Bestellung 10246 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86570LET60 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 18A/87A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V |
auf Bestellung 3156 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86570LET60 | Hersteller : onsemi / Fairchild |
MOSFETs N-Channel Shielded Gate PowerTrench MOSFET |
auf Bestellung 5997 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86570LET60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86570LET60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86570LET60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC86570LET60 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Pulsed drain current: 436A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC86570LET60 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Pulsed drain current: 436A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |