FDMC86570LET60 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.37 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC86570LET60 onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V.
Weitere Produktangebote FDMC86570LET60 nach Preis ab 2.42 EUR bis 6.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMC86570LET60 | ON Semiconductor |
Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R |
auf Bestellung 10246 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
FDMC86570LET60 | onsemi |
Description: MOSFET N-CH 60V 18A/87A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V |
auf Bestellung 3156 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FDMC86570LET60 | onsemi / Fairchild |
MOSFETs N-Channel Shielded Gate PowerTrench MOSFET |
auf Bestellung 5997 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMC86570LET60 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R
Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R
auf Bestellung 10246 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 235+ | 2.84 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.49 EUR |
| FDMC86570LET60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
auf Bestellung 3156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.18 EUR |
| 10+ | 4.21 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.61 EUR |
| 1000+ | 2.42 EUR |
| FDMC86570LET60 |
|
Hersteller: onsemi / Fairchild
MOSFETs N-Channel Shielded Gate PowerTrench MOSFET
MOSFETs N-Channel Shielded Gate PowerTrench MOSFET
auf Bestellung 5997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.31 EUR |
| 10+ | 4.63 EUR |
| 100+ | 3.25 EUR |
| 500+ | 2.64 EUR |
| 1000+ | 2.49 EUR |