FDMC8878_F126 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Technische Details FDMC8878_F126 onsemi
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-MLP (3.3x3.3), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 31W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).