FDMD82100 onsemi / Fairchild
auf Bestellung 2601 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 10.24 EUR |
| 10+ | 9.23 EUR |
| 25+ | 8.74 EUR |
| 100+ | 7.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMD82100 onsemi / Fairchild
Description: MOSFET 2N-CH 100V 7A 12POWER, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V, Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 12-Power3.3x5.
Weitere Produktangebote FDMD82100
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
FDMD82100 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 7A 12-Pin Power 3.3 EP T/R |
Produkt ist nicht verfügbar |
|
| FDMD82100 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 25A; Idm: 80A; 2.1W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 80A Power dissipation: 2.1W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
FDMD82100 | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 7A 12POWER Packaging: Tape & Reel (TR) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-Power3.3x5 |
Produkt ist nicht verfügbar |
|
|
|
FDMD82100 | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 7A 12POWER Packaging: Cut Tape (CT) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-Power3.3x5 |
Produkt ist nicht verfügbar |
|
| FDMD82100 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 25A; Idm: 80A; 2.1W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 80A Power dissipation: 2.1W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |