FDMD8240L onsemi / Fairchild
auf Bestellung 3500 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 6.34 EUR |
| 10+ | 5.28 EUR |
| 100+ | 4.19 EUR |
| 250+ | 3.87 EUR |
| 500+ | 3.51 EUR |
| 1000+ | 2.99 EUR |
| 3000+ | 2.86 EUR |
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Technische Details FDMD8240L onsemi / Fairchild
Description: MOSFET 2N-CH 40V 23A, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 23A, Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 12-Power3.3x5, Part Status: Active.
Weitere Produktangebote FDMD8240L nach Preis ab 5.08 EUR bis 9.62 EUR
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FDMD8240L | Hersteller : onsemi |
 Description: MOSFET 2N-CH 40V 23APackaging: Cut Tape (CT) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-Power3.3x5 Part Status: Active |
auf Bestellung 6002 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDMD8240L | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 62A; Idm: 464A; 42W; PQFN12 Case: PQFN12 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 62A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 3.95mΩ Pulsed drain current: 464A Power dissipation: 42W Gate charge: 56nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMD8240L | Hersteller : onsemi |
Description: MOSFET 2N-CH 40V 23A Packaging: Tape & Reel (TR) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-Power3.3x5 Part Status: Active |
Produkt ist nicht verfügbar |
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| FDMD8240L | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 62A; Idm: 464A; 42W; PQFN12 Case: PQFN12 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 62A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 3.95mΩ Pulsed drain current: 464A Power dissipation: 42W Gate charge: 56nC |
Produkt ist nicht verfügbar |