FDMD8560L onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 46V 22A POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A, 93A
Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Obsolete
auf Bestellung 2932 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.65 EUR |
| 10+ | 5.98 EUR |
| 100+ | 4.90 EUR |
| 500+ | 4.17 EUR |
| 1000+ | 3.52 EUR |
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Technische Details FDMD8560L onsemi
Description: MOSFET 2N-CH 46V 22A POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 22A, 93A, Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22A, 10V, Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power 5x6, Part Status: Obsolete.
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Description: ONSEMI - FDMD8560L - MOSFET, DUAL N-CH, 60V, 93A, PQFN-10 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
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FDMD8560L | Hersteller : onsemi |
Description: MOSFET 2N-CH 46V 22A POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A, 93A Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power 5x6 Part Status: Obsolete |
Produkt ist nicht verfügbar |