FDMD8560L onsemi

Description: MOSFET 2N-CH 60V 22A 8PWR 5X6, Part Status: Obsolete, Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 22A, 93A, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Supplier Device Package: 8-Power 5x6, Vgs(th) (Max) @ Id: 3V @ 250µA.