FDMD8580 ON Semiconductor / Fairchild
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMD8580 ON Semiconductor / Fairchild
Description: MOSFET 2N-CH 80V 16A/82A PWR56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 82A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 40V, Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V, Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: Power56.
Weitere Produktangebote FDMD8580
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
FDMD8580 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 80V 16A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|
 |
FDMD8580 | Hersteller : onsemi |
Description: MOSFET 2N-CH 80V 16A/82A PWR56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 82A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 40V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |