| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.81 EUR |
| 10+ | 5.99 EUR |
| 100+ | 5.13 EUR |
| 250+ | 5.09 EUR |
| 500+ | 4.69 EUR |
| 1000+ | 4.24 EUR |
| 3000+ | 4.11 EUR |
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Technische Details FDMD86100 onsemi / Fairchild
Description: MOSFET 2N-CH 100V 10A 8PWR 5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V, Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Power 5x6, Part Status: Active.
Weitere Produktangebote FDMD86100 nach Preis ab 5.02 EUR bis 10.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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FDMD86100 | onsemi |
 Description: MOSFET 2N-CH 100V 10A 8PWR 5X6Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power 5x6 Part Status: Active |
auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMD86100 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 10A 8PWR 5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Active
Description: MOSFET 2N-CH 100V 10A 8PWR 5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Active
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.52 EUR |
| 10+ | 7.01 EUR |
| 100+ | 5.02 EUR |