auf Bestellung 2089 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.72 EUR |
| 10+ | 5.03 EUR |
| 100+ | 4.31 EUR |
| 250+ | 4.28 EUR |
| 500+ | 3.94 EUR |
| 1000+ | 3.56 EUR |
| 3000+ | 3.45 EUR |
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Technische Details FDMD86100 onsemi / Fairchild
Description: MOSFET 2N-CH 100V 10A 8POWER 5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V, Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Power 5x6, Part Status: Active.
Weitere Produktangebote FDMD86100 nach Preis ab 4.25 EUR bis 8.04 EUR
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FDMD86100 | Hersteller : onsemi |
 Description: MOSFET 2N-CH 100V 10A 8POWER 5X6Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power 5x6 Part Status: Active |
auf Bestellung 1646 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMD86100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R |
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| FDMD86100 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 299A; 33W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 299A Power dissipation: 33W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDMD86100 | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 10A 8POWER 5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power 5x6 Part Status: Active |
Produkt ist nicht verfügbar |
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| FDMD86100 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 299A; 33W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 299A Power dissipation: 33W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |