FDMD8900 ON Semiconductor / Fairchild
auf Bestellung 2494 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details FDMD8900 ON Semiconductor / Fairchild
Description: MOSFET 2N-CH 30V 19A/17A 12POWER, Packaging: Bulk, Package / Case: 12-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 19A, 17A, Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V, Rds On (Max) @ Id, Vgs: 4mOhm @ 19A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 12-Power3.3x5, Part Status: Active.
Weitere Produktangebote FDMD8900 nach Preis ab 1.59 EUR bis 1.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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| FDMD8900 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET 2N-CH 30V 19A/17A 12POWERPackaging: Bulk Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 17A Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V Rds On (Max) @ Id, Vgs: 4mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 12-Power3.3x5 Part Status: Active |
auf Bestellung 15410 Stücke: Lieferzeit 10-14 Tag (e) |
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