FDME1023PZT ON Semiconductor
auf Bestellung 4828 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 265+ | 0.59 EUR |
| 269+ | 0.56 EUR |
| 273+ | 0.53 EUR |
| 278+ | 0.5 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.45 EUR |
| 3000+ | 0.42 EUR |
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Technische Details FDME1023PZT ON Semiconductor
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V, Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-MicroFET (1.6x1.6).
Weitere Produktangebote FDME1023PZT nach Preis ab 0.42 EUR bis 1.5 EUR
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FDME1023PZT | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 20V 2.3A 6-Pin UDFN EP T/R |
auf Bestellung 4828 Stücke: Lieferzeit 14-21 Tag (e) |
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FDME1023PZT | Hersteller : onsemi |
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
auf Bestellung 355000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDME1023PZT | Hersteller : onsemi / Fairchild |
MOSFET 20V Dual P-Channel PowerTrench |
auf Bestellung 60598 Stücke: Lieferzeit 14-28 Tag (e) |
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FDME1023PZT | Hersteller : onsemi |
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
auf Bestellung 358483 Stücke: Lieferzeit 10-14 Tag (e) |
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FDME1023PZT | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 2.3A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| FDME1023PZT | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W Mounting: SMD Pulsed drain current: -6A Power dissipation: 1.4W Gate charge: 7.7nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 530mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDME1023PZT | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W Mounting: SMD Pulsed drain current: -6A Power dissipation: 1.4W Gate charge: 7.7nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 530mΩ |
Produkt ist nicht verfügbar |