FDME1023PZT onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Supplier Device Package: 6-MicroFET (1.6x1.6)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 600mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.6 EUR |
| 10000+ | 0.58 EUR |
| 25000+ | 0.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDME1023PZT onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET, Supplier Device Package: 6-MicroFET (1.6x1.6), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 600mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-UFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDME1023PZT nach Preis ab 0.54 EUR bis 1.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDME1023PZT | Hersteller : onsemi / Fairchild |
MOSFETs 20V Dual P-Channel PowerTrench |
auf Bestellung 57999 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
FDME1023PZT | Hersteller : onsemi |
Description: MOSFET 2P-CH 20V 2.6A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
auf Bestellung 358483 Stücke: Lieferzeit 10-14 Tag (e) |
|