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FDME1023PZT

FDME1023PZT onsemi


fdme1023pzt-d.pdf
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Supplier Device Package: 6-MicroFET (1.6x1.6)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 600mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 355000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.6 EUR
10000+0.58 EUR
25000+0.56 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDME1023PZT onsemi

Description: MOSFET 2P-CH 20V 2.6A 6MICROFET, Supplier Device Package: 6-MicroFET (1.6x1.6), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 600mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-UFDFN Exposed Pad, Packaging: Tape & Reel (TR).

Weitere Produktangebote FDME1023PZT nach Preis ab 0.54 EUR bis 1.5 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDME1023PZT FDME1023PZT Hersteller : onsemi / Fairchild FDME1023PZT_D-2312792.pdf MOSFETs 20V Dual P-Channel PowerTrench
auf Bestellung 57999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.72 EUR
100+0.66 EUR
500+0.54 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDME1023PZT FDME1023PZT Hersteller : onsemi fdme1023pzt-d.pdf Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
auf Bestellung 358483 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
14+1.34 EUR
100+1.05 EUR
500+0.86 EUR
1000+0.68 EUR
2000+0.64 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH