FDME1023PZT onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Supplier Device Package: 6-MicroFET (1.6x1.6)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 600mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.71 EUR |
| 10000+ | 0.69 EUR |
| 25000+ | 0.67 EUR |
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Technische Details FDME1023PZT onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET, Supplier Device Package: 6-MicroFET (1.6x1.6), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 600mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-UFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDME1023PZT nach Preis ab 0.64 EUR bis 1.78 EUR
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FDME1023PZT | onsemi / Fairchild |
MOSFETs 20V Dual P-Channel PowerTrench |
auf Bestellung 57999 Stücke: Lieferzeit 10-14 Tag (e) |
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FDME1023PZT | onsemi |
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
auf Bestellung 358483 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDME1023PZT |
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Hersteller: onsemi / Fairchild
MOSFETs 20V Dual P-Channel PowerTrench
MOSFETs 20V Dual P-Channel PowerTrench
auf Bestellung 57999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.64 EUR |
| FDME1023PZT |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
auf Bestellung 358483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.78 EUR |
| 14+ | 1.59 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.81 EUR |
| 2000+ | 0.76 EUR |