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FDML7610S

FDML7610S onsemi

fdml7610s-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 30V 12A/17A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3x4.5)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.50 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDML7610S onsemi

Description: MOSFET 2N-CH 30V 12A/17A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A, 17A, Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3x4.5).

Weitere Produktangebote FDML7610S nach Preis ab 1.36 EUR bis 3.27 EUR

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FDML7610S FDML7610S Hersteller : onsemi / Fairchild FDML7610S_D-2312793.pdf MOSFET 30V N-Channel PowerTrench
auf Bestellung 2499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.08 EUR
10+2.78 EUR
100+2.24 EUR
500+1.83 EUR
1000+1.52 EUR
3000+1.41 EUR
6000+1.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDML7610S FDML7610S Hersteller : onsemi fdml7610s-d.pdf Description: MOSFET 2N-CH 30V 12A/17A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3x4.5)
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.94 EUR
100+2.37 EUR
500+1.94 EUR
1000+1.61 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDML7610S Hersteller : ONSEMI fdml7610s-d.pdf FDML7610S SMD N channel transistors
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