FDMQ8403 onsemi
Hersteller: onsemi
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.53 EUR |
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Technische Details FDMQ8403 onsemi
Description: ONSEMI - FDMQ8403 - Dual-MOSFET, Vierfach n-Kanal, 100 V, 6 A, 0.11 ohm, tariffCode: 85413000, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 100V, euEccn: NLR, Bauform - Transistor: WDFN, Anzahl der Pins: 12Pin(s), Produktpalette: PowerTrench GreenBridge Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.11ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Vierfach n-Kanal, Verlustleistung, n-Kanal: 17W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote FDMQ8403 nach Preis ab 3.17 EUR bis 5.59 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
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FDMQ8403 | Hersteller : onsemi |
Description: MOSFET 4N-CH 100V 3.1A 12MLP Packaging: Cut Tape (CT) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-MLP (5x4.5) Part Status: Active |
auf Bestellung 48384 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMQ8403 | Hersteller : onsemi / Fairchild | MOSFET SER BOOST LED DRVR |
auf Bestellung 1751 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMQ8403 | Hersteller : ONSEMI |
Description: ONSEMI - FDMQ8403 - Dual-MOSFET, Vierfach n-Kanal, 100 V, 6 A, 0.11 ohm tariffCode: 85413000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: WDFN Anzahl der Pins: 12Pin(s) Produktpalette: PowerTrench GreenBridge Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.11ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Vierfach n-Kanal Verlustleistung, n-Kanal: 17W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 22365 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMQ8403 | Hersteller : ON Semiconductor |
auf Bestellung 5950 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMQ8403 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 100V 3.1A 12-Pin MLP EP T/R |
Produkt ist nicht verfügbar |
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FDMQ8403 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 6A On-state resistance: 191mΩ Type of transistor: N-MOSFET x4 Power dissipation: 17W Polarisation: unipolar Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 12A Mounting: SMD Case: WDFN12 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMQ8403 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 6A On-state resistance: 191mΩ Type of transistor: N-MOSFET x4 Power dissipation: 17W Polarisation: unipolar Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 12A Mounting: SMD Case: WDFN12 |
Produkt ist nicht verfügbar |