auf Bestellung 393000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.72 EUR |
| 96000+ | 1.52 EUR |
| 192000+ | 1.36 EUR |
| 288000+ | 1.23 EUR |
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Technische Details FDMS003N08C ON Semiconductor
Description: MOSFET N-CH 80V 22A/147A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 147A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 56A, 10V, Power Dissipation (Max): 2.7W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 310µA, Supplier Device Package: Power56, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 40 V.
Weitere Produktangebote FDMS003N08C nach Preis ab 5.69 EUR bis 11.21 EUR
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FDMS003N08C | Hersteller : onsemi |
 Description: MOSFET N-CH 80V 22A/147A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 147A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 56A, 10V Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 310µA Supplier Device Package: Power56 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 40 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS003N08C | Hersteller : onsemi |
Description: MOSFET N-CH 80V 22A/147A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 147A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 56A, 10V Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 310µA Supplier Device Package: Power56 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 40 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS003N08C | Hersteller : onsemi |
MOSFETs FET 80V 147A 3.1 mOhm |
auf Bestellung 2174 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS003N08C | Hersteller : ONSEMI |
Description: ONSEMI - FDMS003N08C - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 20030 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMS003N08C | Hersteller : ON Semiconductor |
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auf Bestellung 1665 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDMS003N08C | Hersteller : ON Semiconductor |
N Channel MOSFET |
Produkt ist nicht verfügbar |
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| FDMS003N08C | Hersteller : ONSEMI |
FDMS003N08C SMD N channel transistors |
Produkt ist nicht verfügbar |
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FDMS003N08C | Hersteller : ON Semiconductor |
N Channel MOSFET |
Produkt ist nicht verfügbar |