FDMS015N04B onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 31.3A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8725 pF @ 20 V
auf Bestellung 2956 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.65 EUR |
| 10+ | 3.70 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.97 EUR |
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Technische Details FDMS015N04B onsemi
Description: MOSFET N-CH 40V 31.3A/100A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8725 pF @ 20 V.
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FDMS015N04B | Hersteller : onsemi |
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