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FDMS030N06B

FDMS030N06B onsemi

fdms030n06b-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.52 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDMS030N06B onsemi

Description: MOSFET N-CH 60V 22.1A/100A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V.

Weitere Produktangebote FDMS030N06B nach Preis ab 2.64 EUR bis 7.55 EUR

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FDMS030N06B FDMS030N06B Hersteller : onsemi fdms030n06b-d.pdf MOSFETs NCh 80V 120A 5.3mOhm PowerTrench MOSFET
auf Bestellung 8622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.09 EUR
10+4.31 EUR
100+3.41 EUR
500+3.08 EUR
1000+2.78 EUR
3000+2.64 EUR
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FDMS030N06B FDMS030N06B Hersteller : onsemi fdms030n06b-d.pdf Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
auf Bestellung 3596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.55 EUR
10+5 EUR
100+3.55 EUR
500+3.09 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDMS030N06B Hersteller : Fairchild/ON Semiconductor FDMS030N06B-D.pdf N-канальний ПТ, Udss, В = 60, Id = 100, Ciss, пФ @ Uds, В = 7560 @ 30, Qg, нКл = 75 @ 10 В, Rds = 3 мОм, Ugs(th) = 4,5, Р, Вт = 104, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: PowerTDFN-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 2 Stücke:
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FDMS030N06B Hersteller : ONSEMI fdms030n06b-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
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