FDMS0310AS ON Semiconductor
| Anzahl | Preis |
|---|---|
| 1330+ | 0.11 EUR |
| 1354+ | 0.1 EUR |
| 1372+ | 0.098 EUR |
| 1384+ | 0.096 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS0310AS ON Semiconductor
Description: MOSFET N-CH 30V 19A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V, Power Dissipation (Max): 2.5W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V.
Weitere Produktangebote FDMS0310AS nach Preis ab 0.082 EUR bis 2.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDMS0310AS | ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
FDMS0310AS | onsemi |
Description: MOSFET N-CH 30V 19A/22A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
FDMS0310AS | ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 1063 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
FDMS0310AS | ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
FDMS0310AS | ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
FDMS0310AS | ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS0310AS | onsemi |
MOSFETs N-Channel PowerTrench SyncFET |
auf Bestellung 9109 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMS0310AS | onsemi / Fairchild |
MOSFETs N-Channel PowerTrench SyncFET |
auf Bestellung 9135 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
FDMS0310AS | onsemi |
Description: MOSFET N-CH 30V 19A/22A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
auf Bestellung 14997 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| FDMS0310AS | ONN |
|
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS0310AS |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 332+ | 0.44 EUR |
| 497+ | 0.28 EUR |
| 1330+ | 0.1 EUR |
| 1345+ | 0.096 EUR |
| 1354+ | 0.092 EUR |
| 1363+ | 0.087 EUR |
| 1372+ | 0.083 EUR |
| 1384+ | 0.082 EUR |
| FDMS0310AS |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.59 EUR |
| 6000+ | 0.55 EUR |
| FDMS0310AS |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
auf Bestellung 1063 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 891+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| FDMS0310AS |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 891+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| FDMS0310AS |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.76 EUR |
| FDMS0310AS |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.76 EUR |
| 24000+ | 0.71 EUR |
| FDMS0310AS |
![]() |
Hersteller: onsemi
MOSFETs N-Channel PowerTrench SyncFET
MOSFETs N-Channel PowerTrench SyncFET
auf Bestellung 9109 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.56 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.48 EUR |
| FDMS0310AS |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs N-Channel PowerTrench SyncFET
MOSFETs N-Channel PowerTrench SyncFET
auf Bestellung 9135 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.48 EUR |
| FDMS0310AS |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
auf Bestellung 14997 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 15+ | 1.24 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.64 EUR |
| FDMS0310AS |
![]() |
Hersteller: ONN
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH


