FDMS0310AS ON Semiconductor
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 719+ | 0.21 EUR |
| 720+ | 0.20 EUR |
| 768+ | 0.18 EUR |
| 824+ | 0.16 EUR |
| 887+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS0310AS ON Semiconductor
Description: MOSFET N-CH 30V 19A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V, Power Dissipation (Max): 2.5W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V.
Weitere Produktangebote FDMS0310AS nach Preis ab 0.12 EUR bis 2.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDMS0310AS | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 2998 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS0310AS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 2998 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS0310AS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FDMS0310AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 19A/22A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMS0310AS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 1063 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS0310AS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FDMS0310AS | Hersteller : onsemi / Fairchild |
MOSFETs N-Channel PowerTrench SyncFET |
auf Bestellung 2205 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMS0310AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 19A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
auf Bestellung 14997 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FDMS0310AS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDMS0310AS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FDMS0310AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 100A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FDMS0310AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 100A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |