FDMS0310AS onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS0310AS onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V, Power Dissipation (Max): 2.5W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V.
Weitere Produktangebote FDMS0310AS nach Preis ab 0.87 EUR bis 1.71 EUR
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FDMS0310AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 19A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
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FDMS0310AS | Hersteller : ONSEMI |
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