FDMS0310S onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 19A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 606+ | 0.79 EUR |
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Technische Details FDMS0310S onsemi
Description: MOSFET N-CH 30V 19A/42A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V, Power Dissipation (Max): 2.5W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V.
Weitere Produktangebote FDMS0310S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
FDMS0310S | ON Semiconductor / Fairchild |
MOSFET PT8 30V/20V NCH ERTR EN |
auf Bestellung 2788 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS0310S |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET PT8 30V/20V NCH ERTR EN
MOSFET PT8 30V/20V NCH ERTR EN
auf Bestellung 2788 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH