FDMS0310S onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 19A/42A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
auf Bestellung 4780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 606+ | 0.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS0310S onsemi
Description: ONSEMI - FDMS0310S - Leistungs-MOSFET, n-Kanal + Schottky, 30 V, 42 A, 0.004 ohm, Power 56, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 42A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 46W, Bauform - Transistor: Power 56, Anzahl der Pins: 8Pin(s), Produktpalette: PW Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal + Schottky, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.004ohm, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote FDMS0310S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
FDMS0310S | Hersteller : ON Semiconductor / Fairchild |
MOSFET PT8 30V/20V NCH ERTR EN |
auf Bestellung 2788 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMS0310S | Hersteller : ONSEMI |
Description: ONSEMI - FDMS0310S - Leistungs-MOSFET, n-Kanal + Schottky, 30 V, 42 A, 0.004 ohm, Power 56, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 42A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 46W Bauform - Transistor: Power 56 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 4780 Stücke: Lieferzeit 14-21 Tag (e) |
||
|
|
FDMS0310S | Hersteller : onsemi |
Description: MOSFET N-CH 30V 19A/42A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V |
Produkt ist nicht verfügbar |
|
|
|
FDMS0310S | Hersteller : onsemi |
Description: MOSFET N-CH 30V 19A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V |
Produkt ist nicht verfügbar |