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FDMS0312S

FDMS0312S Fairchild Semiconductor

FAIR-S-A0002363702-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
auf Bestellung 3814 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1229+0.4 EUR
Mindestbestellmenge: 1229
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Technische Details FDMS0312S Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 10V, Power Dissipation (Max): 2.5W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V.

Weitere Produktangebote FDMS0312S nach Preis ab 0.57 EUR bis 1.6 EUR

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Preis ohne MwSt
FDMS0312S FDMS0312S Hersteller : onsemi / Fairchild FDMS0312S_D-2312821.pdf MOSFET 30V N-Chan SyncFET PowerTrench
auf Bestellung 8300 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
33+1.6 EUR
38+ 1.37 EUR
100+ 0.95 EUR
500+ 0.79 EUR
1000+ 0.67 EUR
3000+ 0.6 EUR
6000+ 0.57 EUR
Mindestbestellmenge: 33
FDMS0312S FDMS0312S Hersteller : ONSEMI FAIR-S-A0002363702-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FDMS0312S - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)
FDMS0312S Hersteller : FAIRCHILD FAIR-S-A0002363702-1.pdf?t.download=true&u=5oefqw fdms0312s-d.pdf QFN
auf Bestellung 821 Stücke:
Lieferzeit 21-28 Tag (e)
FDMS0312S FDMS0312S Hersteller : ON Semiconductor 3651455709091198fdms0312s.pdf Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS0312S FDMS0312S Hersteller : ON Semiconductor fdms0312s-d.pdf Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS0312S Hersteller : ONSEMI FAIR-S-A0002363702-1.pdf?t.download=true&u=5oefqw fdms0312s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS0312S FDMS0312S Hersteller : onsemi fdms0312s-d.pdf Description: MOSFET N-CH 30V 19A/42A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
Produkt ist nicht verfügbar
FDMS0312S FDMS0312S Hersteller : onsemi fdms0312s-d.pdf Description: MOSFET N-CH 30V 19A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
Produkt ist nicht verfügbar
FDMS0312S Hersteller : ONSEMI FAIR-S-A0002363702-1.pdf?t.download=true&u=5oefqw fdms0312s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar