FDMS1D2N03DSD ON Semiconductor

Description: MOSFET 2N-CH 30V 19A/70A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 15V, 4860pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 117nC @ 10V, Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V.