auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.84 EUR |
| 10+ | 4.35 EUR |
| 25+ | 4.1 EUR |
| 100+ | 3.5 EUR |
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Technische Details FDMS1D2N03DSD onsemi
Description: MOSFET 2N-CH 30V 19A/70A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 15V, 4860pF @ 15V, Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 117nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6).
Weitere Produktangebote FDMS1D2N03DSD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| FDMS1D2N03DSD | Hersteller : ONSEMI |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS1D2N03DSD | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 19A/70A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 15V, 4860pF @ 15V Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 117nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) |
Produkt ist nicht verfügbar |
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| FDMS1D2N03DSD | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |