FDMS1D4N03S ON Semiconductor / Fairchild

Description: MOSFET N-CH 30V 211A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 211A (Tc), Rds On (Max) @ Id, Vgs: 1.09mOhm @ 38A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 15 V.