auf Bestellung 1588 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.03 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.43 EUR |
| 3000+ | 2.11 EUR |
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Technische Details FDMS2D5N08C onsemi / Fairchild
Description: MOSFET N-CH 80V 166A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 166A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 68A, 10V, Power Dissipation (Max): 138W (Tc), Vgs(th) (Max) @ Id: 4V @ 380µA, Supplier Device Package: Power56, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V.
Weitere Produktangebote FDMS2D5N08C nach Preis ab 2.49 EUR bis 5.12 EUR
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FDMS2D5N08C | Hersteller : onsemi |
 Description: MOSFET N-CH 80V 166A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 68A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: Power56 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V |
auf Bestellung 2651 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS2D5N08C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 24A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS2D5N08C | Hersteller : ONSEMI |
FDMS2D5N08C SMD N channel transistors |
Produkt ist nicht verfügbar |
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FDMS2D5N08C | Hersteller : onsemi |
Description: MOSFET N-CH 80V 166A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 68A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: Power56 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V |
Produkt ist nicht verfügbar |