FDMS3572 onsemi / Fairchild
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.15 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.95 EUR |
| 250+ | 2.93 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.31 EUR |
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Technische Details FDMS3572 onsemi / Fairchild
Description: MOSFET N-CH 80V 8.8A/22A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.8A, 10V, Power Dissipation (Max): 2.5W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (5x6), Power56, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 40 V.
Weitere Produktangebote FDMS3572 nach Preis ab 2.32 EUR bis 6.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDMS3572 | onsemi |
Description: MOSFET N-CH 80V 8.8A/22A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.8A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 40 V |
auf Bestellung 1198 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3572 | onsemi |
MOSFETs 80V N-Ch UltraFET PowerTrench MOSFET |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS3572 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 8.8A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 40 V
Description: MOSFET N-CH 80V 8.8A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 40 V
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.28 EUR |
| 10+ | 4.09 EUR |
| 100+ | 2.86 EUR |
| 500+ | 2.48 EUR |
| FDMS3572 |
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Hersteller: onsemi
MOSFETs 80V N-Ch UltraFET PowerTrench MOSFET
MOSFETs 80V N-Ch UltraFET PowerTrench MOSFET
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.83 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.09 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.48 EUR |
| 3000+ | 2.32 EUR |


