FDMS3604S onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
auf Bestellung 2464 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.64 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.94 EUR |
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Technische Details FDMS3604S onsemi
Description: MOSFET 2N-CH 30V 13A/23A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 23A, Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: Power56.
Weitere Produktangebote FDMS3604S nach Preis ab 0.93 EUR bis 3.12 EUR
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FDMS3604S | Hersteller : onsemi / Fairchild |
MOSFETs PowerTrench Power Stage |
auf Bestellung 834 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3604S Produktcode: 205110
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FDMS3604S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 13A/23A 8-Pin Power 56 EP T/R |
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FDMS3604S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 13A/23A 8-Pin Power 56 EP T/R |
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| FDMS3604S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/40A Pulsed drain current: 40...100A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 10.8/4mΩ Mounting: SMD Gate charge: 29/66nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric Anzahl je Verpackung: 1 Stücke |
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FDMS3604S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 13A/23A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |
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| FDMS3604S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/40A Pulsed drain current: 40...100A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 10.8/4mΩ Mounting: SMD Gate charge: 29/66nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric |
Produkt ist nicht verfügbar |