Technische Details FDMS3606AS ON Semiconductor / Fairchild
Description: MOSFET 2N-CH 30V 13A/27A POWER56, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: Power56, Vgs(th) (Max) @ Id: 2.7V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 13A, 27A, Drain to Source Voltage (Vdss): 30V.
Weitere Produktangebote FDMS3606AS
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDMS3606AS | onsemi |
 Description: MOSFET 2N-CH 30V 13A/27A POWER56Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 27A Drain to Source Voltage (Vdss): 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
FDMS3606AS | onsemi |
Description: MOSFET 2N-CH 30V 13A/27A POWER56 Current - Continuous Drain (Id) @ 25°C: 13A, 27A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS3606AS |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS3606AS |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH