FDMS3626S onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 25V 17.5A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.31 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.3 EUR |
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Technische Details FDMS3626S onsemi
Description: MOSFET 2N-CH 25V 17.5A POWER56, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A, Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V, Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: Power56.
Weitere Produktangebote FDMS3626S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDMS3626S | Hersteller : ON Semiconductor / Fairchild |
MOSFET 25V Dual N-Channel MOSFET |
auf Bestellung 2755 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS3626S | Hersteller : ON Semiconductor |
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auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |