Technische Details FDMS3662 ON Semiconductor
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN, Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 104W (Tc).
Weitere Produktangebote FDMS3662 nach Preis ab 2.33 EUR bis 6.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FDMS3662 | onsemi |
 Description: MOSFET N-CH 100V 8.9A/49A 8PQFNRds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3662 | onsemi / Fairchild |
MOSFETs 100V N-Channel PowerTrench |
auf Bestellung 1483 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3662 | onsemi |
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 9556 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS3662 | Fairchild |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS3662 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.33 EUR |
| FDMS3662 |
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Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel PowerTrench
MOSFETs 100V N-Channel PowerTrench
auf Bestellung 1483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.32 EUR |
| 10+ | 3.97 EUR |
| 100+ | 2.87 EUR |
| 1000+ | 2.67 EUR |
| FDMS3662 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9556 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.97 EUR |
| 10+ | 4.58 EUR |
| 100+ | 3.21 EUR |
| 500+ | 2.86 EUR |
| FDMS3662 |
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Hersteller: Fairchild
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)