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FDMS3662

FDMS3662 onsemi


fdms3662-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
auf Bestellung 27000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.23 EUR
6000+ 3.1 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details FDMS3662 onsemi

Description: MOSFET N-CH 100V 8.9A/49A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V.

Weitere Produktangebote FDMS3662 nach Preis ab 3.43 EUR bis 6.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDMS3662 FDMS3662 Hersteller : onsemi fdms3662-d.pdf Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
auf Bestellung 29151 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.66 EUR
10+ 5.58 EUR
100+ 4.51 EUR
500+ 4.01 EUR
1000+ 3.43 EUR
Mindestbestellmenge: 4
FDMS3662 FDMS3662 Hersteller : onsemi / Fairchild FDMS3662_D-2312674.pdf MOSFET 100V N-Channel PowerTrench
auf Bestellung 2719 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.71 EUR
10+ 5.64 EUR
25+ 5.33 EUR
100+ 4.55 EUR
250+ 4.32 EUR
500+ 4.06 EUR
1000+ 3.48 EUR
Mindestbestellmenge: 8
FDMS3662 Hersteller : Fairchild fdms3662-d.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
FDMS3662 FDMS3662 Hersteller : ON Semiconductor 3674617116739234fdms3662.pdf Trans MOSFET N-CH Si 100V 8.9A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS3662 FDMS3662 Hersteller : ON Semiconductor fdms3662-d.pdf Trans MOSFET N-CH Si 100V 8.9A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS3662 FDMS3662 Hersteller : ON Semiconductor fdms3662-d.pdf Trans MOSFET N-CH Si 100V 8.9A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS3662 Hersteller : ONSEMI fdms3662-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS3662 Hersteller : ONSEMI fdms3662-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar