FDMS3662 ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.85 EUR |
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Technische Details FDMS3662 ON Semiconductor
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V.
Weitere Produktangebote FDMS3662 nach Preis ab 2.03 EUR bis 4.89 EUR
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FDMS3662 | Hersteller : onsemi |
 Description: MOSFET N-CH 100V 8.9A/49A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3662 | Hersteller : onsemi / Fairchild |
MOSFETs 100V N-Channel PowerTrench |
auf Bestellung 2541 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3662 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V |
auf Bestellung 28750 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS3662 | Hersteller : Fairchild |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS3662 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 8.9A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS3662 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 8.9A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS3662 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 8.9A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS3662 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 90A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 24.7mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS3662 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 90A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 24.7mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |