FDMS4D4N08C onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 5.03 EUR |
| 10+ | 3.33 EUR |
| 100+ | 2.32 EUR |
| 500+ | 2.01 EUR |
| 3000+ | 1.88 EUR |
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Technische Details FDMS4D4N08C onsemi / Fairchild
Description: MOSFET N-CH 80V 123A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-PQFN (5x6), Power56, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 123A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS4D4N08C nach Preis ab 1.99 EUR bis 5.1 EUR
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FDMS4D4N08C | onsemi |
 Description: MOSFET N-CH 80V 123A 8PQFNVgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V Current - Continuous Drain (Id) @ 25°C: 123A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6), Power56 |
auf Bestellung 1194 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS4D4N08C | ONN |
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auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS4D4N08C |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 123A 8PQFN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6), Power56
Description: MOSFET N-CH 80V 123A 8PQFN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6), Power56
auf Bestellung 1194 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.1 EUR |
| 10+ | 3.32 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.99 EUR |
| FDMS4D4N08C |
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Hersteller: ONN
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)