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FDMS6673BZ

FDMS6673BZ onsemi


fdms6673bz-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 30V 15.2A/28A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V
auf Bestellung 54000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.31 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDMS6673BZ onsemi

Description: MOSFET P-CH 30V 15.2A/28A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V, Power Dissipation (Max): 2.5W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V.

Weitere Produktangebote FDMS6673BZ nach Preis ab 0.87 EUR bis 3.63 EUR

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FDMS6673BZ FDMS6673BZ Hersteller : onsemi / Fairchild FDMS6673BZ-D.pdf MOSFETs -30V 28A P-Channel PowerTrench
auf Bestellung 9367 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.15 EUR
10+1.65 EUR
100+1.3 EUR
500+1.03 EUR
1000+0.97 EUR
3000+0.92 EUR
24000+0.87 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDMS6673BZ FDMS6673BZ Hersteller : onsemi fdms6673bz-d.pdf MOSFETs -30V 28A P-Channel PowerTrench
auf Bestellung 6315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.36 EUR
10+2.13 EUR
100+1.45 EUR
500+1.18 EUR
1000+1.09 EUR
3000+0.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMS6673BZ FDMS6673BZ Hersteller : onsemi fdms6673bz-d.pdf Description: MOSFET P-CH 30V 15.2A/28A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V
auf Bestellung 58344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.47 EUR
100+1.76 EUR
500+1.45 EUR
1000+1.35 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH