FDMS6673BZ ON Semiconductor
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.79 EUR |
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Technische Details FDMS6673BZ ON Semiconductor
Description: MOSFET P-CH 30V 15.2A/28A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V, Power Dissipation (Max): 2.5W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V.
Weitere Produktangebote FDMS6673BZ nach Preis ab 0.92 EUR bis 3.63 EUR
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FDMS6673BZ | Hersteller : onsemi |
 Description: MOSFET P-CH 30V 15.2A/28A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 15.2A 8-Pin PQFN EP T/R |
auf Bestellung 1254 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 15.2A 8-Pin PQFN EP T/R |
auf Bestellung 1254 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 15.2A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 15.2A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 15.2A 8-Pin PQFN EP T/R |
auf Bestellung 2867 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS6673BZ | Hersteller : onsemi / Fairchild |
MOSFETs -30V 28A P-Channel PowerTrench |
auf Bestellung 20066 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS6673BZ | Hersteller : onsemi |
Description: MOSFET P-CH 30V 15.2A/28A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V |
auf Bestellung 58344 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 15.2A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS6673BZ | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 15.2A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS6673BZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -52A Pulsed drain current: -422A Power dissipation: 73W Case: Power56 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS6673BZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -52A Pulsed drain current: -422A Power dissipation: 73W Case: Power56 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |