Technische Details FDMS6681Z ON Semiconductor / Fairchild
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 73W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS6681Z
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FDMS6681Z | onsemi |
 Description: MOSFET P-CH 30V 21.1A/49A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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|
FDMS6681Z | onsemi |
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS6681Z |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS6681Z |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH