FDMS7656AS onsemi / Fairchild
auf Bestellung 7414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.96 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.29 EUR |
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Technische Details FDMS7656AS onsemi / Fairchild
Description: MOSFET N-CH 30V 31A/49A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V.
Weitere Produktangebote FDMS7656AS nach Preis ab 2.74 EUR bis 3.04 EUR
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FDMS7656AS | Hersteller : onsemi |
 Description: MOSFET N-CH 30V 31A/49A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7656AS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 31A 8-Pin PQFN EP T/R |
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| FDMS7656AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56 Kind of package: reel; tape Case: Power56 Drain-source voltage: 30V Drain current: 49A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Gate charge: 133nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 180A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS7656AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 31A/49A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V |
Produkt ist nicht verfügbar |
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| FDMS7656AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56 Kind of package: reel; tape Case: Power56 Drain-source voltage: 30V Drain current: 49A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Gate charge: 133nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 180A Mounting: SMD |
Produkt ist nicht verfügbar |