Produkte > ONSEMI > FDMS8027S
FDMS8027S

FDMS8027S onsemi

fdms8027s-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
10+2.16 EUR
100+1.54 EUR
500+1.26 EUR
1000+0.52 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FDMS8027S onsemi

Description: MOSFET N-CH 30V 18A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V, Power Dissipation (Max): 2.5W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V.

Weitere Produktangebote FDMS8027S nach Preis ab 0.43 EUR bis 2.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDMS8027S FDMS8027S Hersteller : onsemi / Fairchild fdms8027s-d.pdf MOSFETs 30V N-Channel PowerTrench SyncFET
auf Bestellung 3506 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.97 EUR
10+2.36 EUR
100+1.67 EUR
500+1.20 EUR
1000+0.56 EUR
3000+0.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8027S FDMS8027S Hersteller : ON Semiconductor 3654801772259380fdms8027s.pdf Trans MOSFET N-CH Si 30V 18A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8027S Hersteller : ONSEMI fdms8027s-d.pdf FDMS8027S SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8027S FDMS8027S Hersteller : onsemi fdms8027s-d.pdf Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH