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FDMS8027S

FDMS8027S Fairchild Semiconductor

FAIR-S-A0002363639-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
auf Bestellung 18985 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
347+2.09 EUR
Mindestbestellmenge: 347
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Technische Details FDMS8027S Fairchild Semiconductor

Description: MOSFET N-CH 30V 18A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V, Power Dissipation (Max): 2.5W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V.

Weitere Produktangebote FDMS8027S nach Preis ab 1.95 EUR bis 4.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDMS8027S FDMS8027S Hersteller : onsemi fdms8027s-d.pdf Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
auf Bestellung 2970 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.29 EUR
10+ 3.56 EUR
100+ 2.84 EUR
500+ 2.4 EUR
1000+ 2.04 EUR
Mindestbestellmenge: 7
FDMS8027S FDMS8027S Hersteller : onsemi / Fairchild FDMS8027S_D-2312465.pdf MOSFET 30V N-Channel PowerTrench SyncFET
auf Bestellung 3851 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.32 EUR
15+ 3.59 EUR
100+ 2.86 EUR
250+ 2.63 EUR
500+ 2.39 EUR
1000+ 2.05 EUR
3000+ 1.95 EUR
Mindestbestellmenge: 13
FDMS8027S FDMS8027S Hersteller : ON Semiconductor 3654801772259380fdms8027s.pdf Trans MOSFET N-CH Si 30V 18A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS8027S Hersteller : ONSEMI fdms8027s-d.pdf FAIR-S-A0002363639-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 6.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS8027S FDMS8027S Hersteller : onsemi fdms8027s-d.pdf Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
Produkt ist nicht verfügbar
FDMS8027S Hersteller : ONSEMI fdms8027s-d.pdf FAIR-S-A0002363639-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 6.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
Produkt ist nicht verfügbar