FDMS8050 onsemi
Hersteller: onsemi
Description: MOSFET N-CHANNEL 30V 55A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
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Technische Details FDMS8050 onsemi
Description: MOSFET N-CHANNEL 30V 55A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3V @ 750µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V.
Weitere Produktangebote FDMS8050
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDMS8050 | onsemi |
Description: MOSFET N-CHANNEL 30V 55A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
FDMS8050 | onsemi |
MOSFETs PT8 N 30/20 in Powerclip 56 Single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
FDMS8050 | onsemi / Fairchild |
MOSFETs PT8 N 30/20 in Powerclip 56 Single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS8050 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 400A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 156W Case: Power56 Mounting: SMD Kind of package: reel; tape Gate charge: 285nC On-state resistance: 0.9mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 200A Pulsed drain current: 400A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS8050 |
|
Hersteller: onsemi
Description: MOSFET N-CHANNEL 30V 55A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 55A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8050 |
|
Hersteller: onsemi
MOSFETs PT8 N 30/20 in Powerclip 56 Single
MOSFETs PT8 N 30/20 in Powerclip 56 Single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8050 |
|
Hersteller: onsemi / Fairchild
MOSFETs PT8 N 30/20 in Powerclip 56 Single
MOSFETs PT8 N 30/20 in Powerclip 56 Single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8050 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 400A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 156W
Case: Power56
Mounting: SMD
Kind of package: reel; tape
Gate charge: 285nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 200A
Pulsed drain current: 400A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 400A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 156W
Case: Power56
Mounting: SMD
Kind of package: reel; tape
Gate charge: 285nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 200A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH