FDMS8333L ON Semiconductor
| Anzahl | Preis |
|---|---|
| 238+ | 0.61 EUR |
| 242+ | 0.58 EUR |
| 245+ | 0.55 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.46 EUR |
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Technische Details FDMS8333L ON Semiconductor
Description: MOSFET N CH 40V 22A POWER 56, Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS8333L nach Preis ab 0.44 EUR bis 3.26 EUR
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FDMS8333L | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 40V 22A 8-Pin PQFN EP T/R |
auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8333L | Hersteller : onsemi / Fairchild |
MOSFETs NChan 40V 76A 69W PowerTrench MOSFET |
auf Bestellung 34079 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8333L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 40V 22A 8-Pin PQFN EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8333L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 76A Pulsed drain current: 250A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2993 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8333L | Hersteller : onsemi |
MOSFETs NChan 40V 76A 69W PowerTrench MOSFET |
auf Bestellung 26102 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8333L | Hersteller : onsemi |
Description: MOSFET N CH 40V 22A POWER 56 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) |
auf Bestellung 2189 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8333L | Hersteller : onsemi |
Description: MOSFET N CH 40V 22A POWER 56 Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
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