FDMS8333L onsemi
Hersteller: onsemiDescription: MOSFET N CH 40V 22A POWER 56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
auf Bestellung 2609 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.32 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.06 EUR |
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Technische Details FDMS8333L onsemi
Description: MOSFET N CH 40V 22A POWER 56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V.
Weitere Produktangebote FDMS8333L nach Preis ab 1.32 EUR bis 2.63 EUR
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FDMS8333L | Hersteller : onsemi / Fairchild |
MOSFET NChan 40V 76A 69W PowerTrench MOSFET |
auf Bestellung 35829 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS8333L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 40V 22A 8-Pin PQFN EP T/R |
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| FDMS8333L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Drain-source voltage: 40V Drain current: 76A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of package: reel; tape Gate charge: 64nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Mounting: SMD Case: Power56 Anzahl je Verpackung: 1 Stücke |
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FDMS8333L | Hersteller : onsemi |
Description: MOSFET N CH 40V 22A POWER 56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V |
Produkt ist nicht verfügbar |
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| FDMS8333L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Drain-source voltage: 40V Drain current: 76A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of package: reel; tape Gate charge: 64nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Mounting: SMD Case: Power56 |
Produkt ist nicht verfügbar |