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FDMS8350LET40

FDMS8350LET40 onsemi

fdms8350let40-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.66 EUR
Mindestbestellmenge: 3000
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Technische Details FDMS8350LET40 onsemi

Description: MOSFET N-CH 40V 49A/300A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V, Power Dissipation (Max): 3.33W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V.

Weitere Produktangebote FDMS8350LET40 nach Preis ab 3.89 EUR bis 7.53 EUR

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Preis ohne MwSt
FDMS8350LET40 FDMS8350LET40 Hersteller : onsemi fdms8350let40-d.pdf Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.53 EUR
10+ 6.31 EUR
100+ 5.11 EUR
500+ 4.54 EUR
1000+ 3.89 EUR
Mindestbestellmenge: 3
FDMS8350LET40 FDMS8350LET40 Hersteller : ON Semiconductor fdms8350let40-d.pdf Trans MOSFET N-CH 40V 49A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS8350LET40 FDMS8350LET40 Hersteller : onsemi / Fairchild FDMS8350LET40_D-2312860.pdf MOSFET PT8 40V/20V NchPower Trench MOSFET
Produkt ist nicht verfügbar
FDMS8350LET40 Hersteller : ONSEMI fdms8350let40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 47A; Idm: 1464A; 125W; PQFN8
Case: PQFN8
Mounting: SMD
On-state resistance: 1.4mΩ
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 125W
Pulsed drain current: 1464A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 47A
Gate charge: 219nC
Produkt ist nicht verfügbar