FDMS86105 ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.16 EUR |
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Technische Details FDMS86105 ON Semiconductor
Description: MOSFET N-CH 100V 6A/26A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V, Power Dissipation (Max): 2.5W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V.
Weitere Produktangebote FDMS86105 nach Preis ab 1.22 EUR bis 4.42 EUR
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FDMS86105 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 100V 6A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86105 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 6A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86105 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 6A/26A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86105 | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Channel PowerTrench MOSFET |
auf Bestellung 3663 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS86105 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 6A/26A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V |
auf Bestellung 22777 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86105 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 6A 8-Pin PQFN EP T/R |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86105 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 6A 8-Pin PQFN EP T/R |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86105 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 6A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86105 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 6A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86105 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 30A; 48W; Power56 Mounting: SMD Case: Power56 Polarisation: unipolar Drain current: 26A Drain-source voltage: 100V Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Power dissipation: 48W Type of transistor: N-MOSFET On-state resistance: 57mΩ Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS86105 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 30A; 48W; Power56 Mounting: SMD Case: Power56 Polarisation: unipolar Drain current: 26A Drain-source voltage: 100V Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Power dissipation: 48W Type of transistor: N-MOSFET On-state resistance: 57mΩ Kind of package: reel; tape |
Produkt ist nicht verfügbar |