FDMS86150 onsemi
Hersteller: onsemi
Description: MOSFET N CH 100V 16A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 3000+ | 2.76 EUR |
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Technische Details FDMS86150 onsemi
Description: MOSFET N CH 100V 16A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V, Power Dissipation (Max): 2.7W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V.
Weitere Produktangebote FDMS86150 nach Preis ab 2.76 EUR bis 8.06 EUR
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FDMS86150 | Hersteller : onsemi |
Description: MOSFET N CH 100V 16A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
auf Bestellung 14347 Stücke: Lieferzeit 10-14 Tag (e) |
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