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FDMS86150A

FDMS86150A onsemi

FDMS86150A_Rev3_Jun2019.pdf Hersteller: onsemi
Description: FET 100V 4.85 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4665 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.08 EUR
Mindestbestellmenge: 3000
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Technische Details FDMS86150A onsemi

Description: FET 100V 4.85 MOHM PQFN56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V, Power Dissipation (Max): 2.7W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power56, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4665 pF @ 50 V.

Weitere Produktangebote FDMS86150A nach Preis ab 3.15 EUR bis 6.95 EUR

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FDMS86150A FDMS86150A Hersteller : onsemi FDMS86150A_Rev3_Jun2019.pdf Description: FET 100V 4.85 MOHM PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4665 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.34 EUR
10+ 5.31 EUR
100+ 4.3 EUR
500+ 3.82 EUR
1000+ 3.27 EUR
Mindestbestellmenge: 3
FDMS86150A FDMS86150A Hersteller : onsemi FDMS86150A_D-3150131.pdf MOSFET N-Channel Shielded Gate PowerTrench MOSFET 100V, 80A, 4.85mohm N-Channel Shielded Gate PowerTrench MOSFET 100V, 80A, 4.85mohm
auf Bestellung 5617 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.95 EUR
10+ 6.25 EUR
100+ 5.12 EUR
500+ 3.89 EUR
1000+ 3.34 EUR
3000+ 3.19 EUR
6000+ 3.15 EUR
FDMS86150A Hersteller : ON Semiconductor 820970405939403fdms86150a.pdf N-Channel Shielded Gate power trench MOSFET
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