FDMS86150A onsemi
Hersteller: onsemiDescription: FET 100V 4.85 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4665 pF @ 50 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 3.1 EUR |
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Technische Details FDMS86150A onsemi
Description: FET 100V 4.85 MOHM PQFN56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V, Power Dissipation (Max): 2.7W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power56, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4665 pF @ 50 V.
Weitere Produktangebote FDMS86150A nach Preis ab 3.1 EUR bis 8.2 EUR
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FDMS86150A | Hersteller : onsemi |
MOSFETs FET 100V 485 MOHM PQFN56 |
auf Bestellung 5596 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150A | Hersteller : onsemi |
Description: FET 100V 4.85 MOHM PQFN56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 2.7W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4665 pF @ 50 V |
auf Bestellung 23950 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS86150A | Hersteller : ON Semiconductor |
N-Channel Shielded Gate power trench MOSFET |
Produkt ist nicht verfügbar |