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FDMS86150A

FDMS86150A onsemi

FDMS86150A_Rev3_Jun2019.pdf Hersteller: onsemi
Description: FET 100V 4.85 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4665 pF @ 50 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDMS86150A onsemi

Description: FET 100V 4.85 MOHM PQFN56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V, Power Dissipation (Max): 2.7W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power56, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4665 pF @ 50 V.

Weitere Produktangebote FDMS86150A nach Preis ab 3.10 EUR bis 8.20 EUR

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FDMS86150A FDMS86150A Hersteller : onsemi FDMS86150A_Rev3_Jun2019.pdf MOSFETs N-Channel Shielded Gate PowerTrench MOSFET 100V, 80A, 4.85mohm N-Channel Shielded Gate PowerTrench MOSFET 100V, 80A, 4.85mohm
auf Bestellung 5616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.85 EUR
10+4.77 EUR
100+3.52 EUR
500+3.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86150A FDMS86150A Hersteller : onsemi FDMS86150A_Rev3_Jun2019.pdf Description: FET 100V 4.85 MOHM PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4665 pF @ 50 V
auf Bestellung 23950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.20 EUR
10+5.45 EUR
100+3.88 EUR
500+3.21 EUR
1000+3.10 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86150A Hersteller : ON Semiconductor 820970405939403fdms86150a.pdf N-Channel Shielded Gate power trench MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH