Technische Details FDMS86150ET100 ON Semiconductor
Description: MOSFET N-CH 100V 16A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc), Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V, Power Dissipation (Max): 3.3W (Ta), 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V.
Weitere Produktangebote FDMS86150ET100 nach Preis ab 6.37 EUR bis 15.84 EUR
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FDMS86150ET100 | ON Semiconductor |
 Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86150ET100 | ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R |
auf Bestellung 2305 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86150ET100 | onsemi / Fairchild |
MOSFETs 100V N-Channel PowerTrench MOSFET |
auf Bestellung 1957 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150ET100 | onsemi |
MOSFETs 100V N-Channel PowerTrench MOSFET |
auf Bestellung 1645 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150ET100 | onsemi |
Description: MOSFET N-CH 100V 16A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
auf Bestellung 1317 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150ET100 | onsemi |
Description: MOSFET N-CH 100V 16A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDMS86150ET100 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 6.37 EUR |
| FDMS86150ET100 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R
auf Bestellung 2305 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 8.26 EUR |
| 100+ | 7.74 EUR |
| 500+ | 7.18 EUR |
| 1000+ | 6.62 EUR |
| FDMS86150ET100 |
|
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel PowerTrench MOSFET
MOSFETs 100V N-Channel PowerTrench MOSFET
auf Bestellung 1957 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.01 EUR |
| 10+ | 7.69 EUR |
| 100+ | 7.03 EUR |
| 500+ | 6.97 EUR |
| 1000+ | 6.95 EUR |
| 3000+ | 6.45 EUR |
| FDMS86150ET100 |
|
Hersteller: onsemi
MOSFETs 100V N-Channel PowerTrench MOSFET
MOSFETs 100V N-Channel PowerTrench MOSFET
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.07 EUR |
| 10+ | 9.84 EUR |
| 100+ | 8.04 EUR |
| 500+ | 7.81 EUR |
| 1000+ | 7.52 EUR |
| FDMS86150ET100 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
auf Bestellung 1317 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.84 EUR |
| 10+ | 10.79 EUR |
| 100+ | 7.94 EUR |
| 500+ | 7.87 EUR |
| FDMS86150ET100 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)