FDMS86150ET100 ON Semiconductor
auf Bestellung 1079 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 2.49 EUR |
| 60+ | 2.36 EUR |
| 61+ | 2.24 EUR |
| 100+ | 2.12 EUR |
| 250+ | 2 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.78 EUR |
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Technische Details FDMS86150ET100 ON Semiconductor
Description: MOSFET N-CH 100V 16A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc), Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V, Power Dissipation (Max): 3.3W (Ta), 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V.
Weitere Produktangebote FDMS86150ET100 nach Preis ab 1.78 EUR bis 13.53 EUR
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FDMS86150ET100 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R |
auf Bestellung 1079 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86150ET100 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 16A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R |
auf Bestellung 5230 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R |
auf Bestellung 2252 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin Power QFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin Power QFN EP T/R |
auf Bestellung 1385 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86150ET100 | Hersteller : onsemi / Fairchild |
MOSFETs 100V N-Channel PowerTrench MOSFET |
auf Bestellung 1957 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150ET100 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 16A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
auf Bestellung 19538 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 16A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86150ET100 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Pulsed drain current: 617A Power dissipation: 187W Case: Power56 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |